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DMT10H015LPS-13 

Among 2 related components, DMT10H015LPS-13  have related pdf.
Part Number Manufacturer Description Datasheet
DMT10H015LPS-13 Diodes Incorporated MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W Download
DMT10H015LPS-13 Diodes Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 7.3A Gate-source threshold voltage: 3.5V @ 250uA Drain-source on-resistance: 16mΩ @ 20A, 10V Maximum power dissipation ( Ta=25°C): 1.3W Type: N-channel Download
DMT10H015LPS-13  parameters:

Description

漏源电压(Vdss):100V 连续漏极电流(Id)(25°C 时):7.3A 栅源极阈值电压:3.5V @ 250uA 漏源导通电阻:16mΩ @ 20A,10V 最大功率耗散(Ta=25°C):1.3W 类型:N沟道

Parametric
Parameter NameAttribute value
Drain-source voltage (Vdss)100V
Continuous drain current (Id) at 25°C7.3A
Gate-source threshold voltage3.5V @ 250uA
Drain-source on-resistance16mΩ @ 20A,10V
Maximum power dissipation (Ta=25°C)1.3W
typeN channel

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