Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
DMT10H015LPS-13 | Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | Download |
DMT10H015LPS-13 | Diodes | Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 7.3A Gate-source threshold voltage: 3.5V @ 250uA Drain-source on-resistance: 16mΩ @ 20A, 10V Maximum power dissipation ( Ta=25°C): 1.3W Type: N-channel | Download |
漏源电压(Vdss):100V 连续漏极电流(Id)(25°C 时):7.3A 栅源极阈值电压:3.5V @ 250uA 漏源导通电阻:16mΩ @ 20A,10V 最大功率耗散(Ta=25°C):1.3W 类型:N沟道
Parameter Name | Attribute value |
Drain-source voltage (Vdss) | 100V |
Continuous drain current (Id) at 25°C | 7.3A |
Gate-source threshold voltage | 3.5V @ 250uA |
Drain-source on-resistance | 16mΩ @ 20A,10V |
Maximum power dissipation (Ta=25°C) | 1.3W |
type | N channel |